Bilder dienen nur der Illustration
Hersteller-Nummer | K4T51163QJ-HCE6 |
Hersteller | SAMSUNG |
Produktkategorie | DDR2 SDRAM |
IC-Code | 32MX16 DDR2 |
Gehäuse | FBGA-84 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | 0 C~+85 C |
Geschwindigkeit | 667 MBPS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K4T51163QJ-HCE6 | 9.950 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT47H32M16HR-3LF | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-3TR:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E ES:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR25EGTR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR31T | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR3:FFBGA84T R | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |