K4T51163QN-BIE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T51163QN-BIE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 32MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | 1280 |
| Abmessungen Karton | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 14th Generation |
| Power | Normal Power |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| IS43DR16320C-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320C-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320C-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320D-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320D-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320D-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320D-3DBLI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320E-3DBI | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320E-3DBI-TR | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |
| IS43DR16320E-3DBLA1 | FBGA-84 | 1.8 V | 667 MBPS | -40 C~+85 C |