Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T56163QI-ZLD5 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 16MX16 DDR2 |
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 333 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Internal Banks | 4 Banks |
| Power | Low Power |
| Generation | 10th Generation |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T56163QI-ZLD5 | 6.500 | Anfrage senden | |
| K4T56163QI-ZLD5 | 2.000 | 2010+ | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4T56163QB-QC20 | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |
| K4T56163QB-QC25 | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |
| MT47H16M16BG-5E | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |
| MT47H16M16BG-5E ES | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |
| MT47H16M16BG-5E ES:B | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |
| MT47H16M16BG-5E:B | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |
| MT47H16M16BG-5E:B TR | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |
| MT47H16M16BG5E.B | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |
| MT47H16M16BG5EBTR | FBGA-84 | 1.8 V | 333 MHZ | 0 C~+85 C |