K4T56163QN-HCE6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T56163QN-HCE6 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 16MX16 DDR2 |
| Andere Bezeichnungen | K4T56163QNHCE6T00 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 667 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 14th Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T56163QN-HCE6 | 1.461 | 2011 | Anfrage senden |
| K4T56163QN-HCE6 | 5.900 | 2009+ | Anfrage senden |
| K4T56163QN-HCE6 | 2.000 | 2010+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| HYB18T256160A-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160AF-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160AF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160AL-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160BF-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256160BF-3S | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256161AF-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256161AF-33 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256161AFL33 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HYB18T256161BF-3 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |