K4T56163QN-HCE7
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4T56163QN-HCE7 |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR2 SDRAM |
| IC-Code | 16MX16 DDR2 |
Produktbeschreibung
| Gehäuse | FBGA-84 |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 800 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 14th Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4T56163QN-HCE7 | 463 | 1210+ | Anfrage senden |
| K4T56163QN-HCE7 | 4.000 | Anfrage senden | |
| K4T56163QN-HCE7 | 5.224 | Anfrage senden | |
| K4T56163QN-HCE7 | 5.000 | Anfrage senden | |
| K4T56163QN-HCE7 | 161 | Anfrage senden | |
| K4T56163QN-HCE7 | 2.000 | 2010+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EM68A16CBQC-25H | FBGA-84 | 1.7V~1.9V | 800 MBPS | 0 C~+85 C |
| HYB18T256160AC-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T256160AF | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T256160AF-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T256160AF-28 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T256160AF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T256160AF-5A | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T256160AF50 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T256160BF-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T256160BF-25F | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |