K9F4G08U0B-SI

GENERAL DESCRIPTION Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A progr am operation can be per- formed in typical 200 µs on the (2K+64)Byte page and an erase oper ation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the dat a register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repe- tition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping- out algorithm. The K9F4G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

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