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Hersteller-Nummer | K9F5608R0D-JCB0 |
Hersteller | SAMSUNG |
Produktkategorie | FLASH-NAND |
IC-Code | 32MX8 NAND SLC |
Gehäuse | FBGA-63 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.65V-1.95 |
Betriebstemperatur | 0 C~+70 C |
Geschwindigkeit | 50 NS |
Standard Stückzahl | 960 |
Abmessungen Karton | |
Number Of Words | 32M |
Bit Organization | x8 |
Density | 256M |
Generation | 5th Generation |
Pre Prog Version | None |
Classification | SLC Normal |
Cust Bad Block | Include Bad Block |
Mode | Normal |
GENERAL DESCRIPTION Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8capacity. The device is offered in 1.8V, 2.7V, 3.3tsVcc. I NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as comm and input. The on-chip write control automates all program and er ase functions including pulse repetition, where required, and in ternal verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608X0D′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K9F5608Q0C-GCB0 | FBGA-63 | 1.8 V | 50 NS | 0 C~+70 C |
K9F5608Q0C-JCB0 | FBGA-63 | 1.8 V | 50 NS | 0 C~+70 C |
K9F5608QOB-HCBO | FBGA-63 | 1.8 V | 50 NS | 0 C~+70 C |
K9F5608QOC-HCBO | FBGA-63 | 1.8 V | 50 NS | 0 C~+70 C |
K9F5608R0D-JCBO | FBGA-63 | 1.65V-1.95 | 50 NS | 0 C~+70 C |
K9F5608ROD-JCBO | FBGA-63 | 1.65V-1.95 | 50 NS | 0 C~+70 C |