Bilder dienen nur der Illustration
Hersteller-Nummer | K9F8G08UOAJIBO |
Hersteller | SAMSUNG |
Produktkategorie | FLASH-NAND |
IC-Code | 1GX8 NAND SLC |
Gehäuse | FBGA-63 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 2.7V-3.6V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 25 NS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 1G |
Bit Organization | x8 |
Density | 8G |
Generation | 2nd Generation |
Pre Prog Version | Serial |
Classification | SLC Normal |
Cust Bad Block | Include Bad Block |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K9F8G08UOAJIBO | 1.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
S34ML08G201BHI00 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
S34ML08G201BHI000 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
S34ML08G201BHI003 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
S34ML08G301BHI000 | BGA-63 | 3.0V | 25 NS | -40 ~+85 C(IND) |
S34ML08G301BHI100 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG3S0FBAID | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TH58BVG3S0HBAI4 TRAY | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TH58BVG3S0HBAI4YCL | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TH58NVG3S0HBAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TH58NVG3S0HBAI4 TRAY | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |