Bilder dienen nur der Illustration
| Hersteller-Nummer | K9GBG08U0B-W000000 |
| Hersteller | SAMSUNG |
| Produktkategorie | FLASH-NAND |
| IC-Code | 4GX8 NAND MLC |
| Gehäuse | WAFER |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 2.7V-3.6V |
| Betriebstemperatur | NONE (Containing Wafer, CHIP, BIZ, Exception handling code) |
| Geschwindigkeit | |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 4G |
| Bit Organization | x8 |
| Density | 32G |
| Pre Prog Version | None |
| Generation | 3rd Generation |
| Mode | Normal |
| Classification | MLC Normal |
| Cust Bad Block | NONE (Containing Wafer, CHIP, BIZ, Exception handling code) |