| Gehäuse |
ULGA-52
|
| Verpackung |
TRAY
|
| RoHS |
Leaded
|
| Spannungsversorgung |
2.7V-3.6V
|
| Betriebstemperatur |
-40 C~+85 C
|
| Geschwindigkeit |
25 NS
|
| Standard Stückzahl |
|
| Abmessungen Karton |
|
| Number Of Words |
1G
|
| Bit Organization |
x8
|
| Density |
8G
|
| Generation |
3rd Generation
|
| Pre Prog Version |
None
|
| Classification |
SLC DDP
|
| Cust Bad Block |
Include Bad Block
|
| Mode |
Dual nCE & Dual R/nB
|
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V
Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A progr am operation can be per-
formed in typical 200 µs on the (2K+64)Byte page and an erase oper ation can be performed in typical 1.5ms on a (128K+4K)Byte
block. Data in the dat a register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data
input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repe-
tition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the
K9F4G08X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-
out algorithm. The K9F4G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and
other portable applications requiring non-volatility.
