K9W4G08U1M-YIB0
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K9W4G08U1M-YIB0 |
| Hersteller | SAMSUNG |
| Produktkategorie | FLASH-NAND |
| IC-Code | 512MX8 NAND SLC |
| Andere Bezeichnungen | K9W4G08U1M-YIB0T00 |
Produktbeschreibung
| Gehäuse | TSOP-48 |
| Verpackung | TRAY |
| RoHS | Leaded |
| Spannungsversorgung | 2.7V-3.6V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 25 NS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Pre Prog Version | None |
| Generation | 1st Generation |
| Mode | Dual nCE & Dual R/nB |
| Classification | SLC 4 Die Stack |
| Cust Bad Block | Include Bad Block |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K9W4G08U1M-YIB0 | 2.000 | 2006+ | Anfrage senden |
| K9W4G08U1M-YIB0T00 | 170 | Anfrage senden | |
| K9W4G08U1M-YIB0T00 | 867 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| EN27LN4G08-25TIP | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
| H27U4G8F2BTR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
| H27U4G8F2DTR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
| H27U4G8F2DTR-BIR | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
| H27U4G8F2ETR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
| IS34ML04G081-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
| IS34ML04G081-TLI-TR | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
| IS34ML04G084-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
| IS34ML04G084-TLI-TR | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
| IS34ML04G088-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |