Bilder dienen nur der Illustration
Hersteller-Nummer | K9W8G08U1M-PIB0 |
Hersteller | SAMSUNG |
Produktkategorie | FLASH-NAND |
IC-Code | 1GX8 NAND SLC |
Andere Bezeichnungen | K9W8G08U1M-PIB00 |
K9W8G08U1M-PIB000 | |
K9W8G08U1M-PIB0T00 |
Gehäuse | TSOP-48 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 2.7V-3.6V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 1 MHZ |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 1G |
Bit Organization | x8 |
Density | 8G |
Generation | 1st Generation |
Pre Prog Version | None |
Classification | SLC 4 Die Stack |
Cust Bad Block | Include Bad Block |
Mode | Dual nCE & Dual R/nB |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K9W8G08U1M-PIB0 | 4.000 | Anfrage senden | |
K9W8G08U1M-PIB0 | 2.000 | 2009+ | Anfrage senden |
K9W8G08U1M-PIB0 | 6.830 | Anfrage senden | |
K9W8G08U1M-PIB0T00 | 2.500 | Anfrage senden | |
K9W8G08U1M-PIB0 | 50.000 | 2008+ | Anfrage senden |
K9W8G08U1M-PIB0 | 764 | 2006 | Anfrage senden |
K9W8G08U1M-PIB0 | 764 | 2006+ | Anfrage senden |
K9W8G08U1M-PIB0 | 1.000 | 0510+ | Anfrage senden |
K9W8G08U1M-PIB0 | 1.000 | 200510+ | Anfrage senden |
K9W8G08U1M-PIB0 | 2.000 | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
K9W8G08G08U1MPIBO | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U0B-PIB0 | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U0B-YIB0 | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U0D-YIB0 | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U1APIB0 | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U1M-PIB0000/PCB000 | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U1M-PIBO | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U1M-YIB | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U1M-YIB0 | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |
K9W8G08U1M-YIBO | TSOP-48 | 2.7V-3.6V | 1 MHZ | -40 C~+85 C |