M471A4G43BB1-CWE

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer M471A4G43BB1-CWE
Hersteller SAMSUNG
Produktkategorie DDR4 SO-DIMM
IC-Code 32GB DDR4 SODIMM

Produktbeschreibung

Gehäuse 260-PIN
Verpackung
RoHS RoHS
Spannungsversorgung 1.2 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 3200 MBPS
Standard Stückzahl
Abmessungen Karton
Number Of Words 4G
Bit Organization x8
Density 32G
Power Normal Power
Generation 3rd Gen.
Dimm Type SODIMM
Banks 16Banks & POD-1.2V
Pcb Revision 1st Rev

Verfügbare Angebote

Teilenummer Menge Datecode
M471A4G43BB1-CWE 500 DC25+ Anfrage senden
M471A4G43BB1-CWE 20 Anfrage senden
M471A4G43BB1-CWE 0 DC Anfrage senden
M471A4G43BB1-CWE 0 DC23+ Anfrage senden
M471A4G43BB1-CWE 1.000 224X Anfrage senden
M471A4G43BB1-CWE 0 Anfrage senden
M471A4G43BB1-CWE 119 2111 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
M471A4G43AB1-CWE 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43AB1-CWED0 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43AB1-CWED0 BID 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43AB1-CWEDY 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43AB1-CWEX 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43BB1-CWED0 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43BB1-CWEX 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43CB1-CWE 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43CB1-CWEDY 260-PIN 1.2 V 3200 MBPS 0 C~+85 C
M471A4G43MB1-CWED0 260-PIN 1.2 V 3200 MBPS 0 C~+85 C