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Hersteller-Nummer | MT29F4G08ABADAWP-IT:D |
Hersteller | MICRON |
Produktkategorie | FLASH-NAND |
IC-Code | 512MX8 NAND SLC |
Andere Bezeichnungen | MT29F4G08ABADAWP-IT :D |
MT29F4G08ABADAWP-IT:D PBF | |
MT29F4G08ABADAWP-IT:D TR | |
MT29F4G08ABADAWP-IT:DTR MIC | |
MT29F4G08ABADAWP-ITDTR | |
MT29F4G08ABADAWP:IT:D | |
MT29F4G08ABADAWPITD |
Gehäuse | TSOP-48 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 25 NS |
Standard Stückzahl | 960 |
Abmessungen Karton | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Production Status | Production |
Package Material | Pb-free |
Interface | Async only |
Level | SLC |
Generation Feature Set | 4th set of device features (rev only if different) |
Speed Grade | Async only |
Design Revision | D |
Package | TSOP I(48-pin CPL version) |
Classification | 1-1-1-1 (Die-nCE-RnB-IO Channels) |
General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization. This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.
Teilenummer | Menge | Datecode | |
---|---|---|---|
MT29F4G08ABADAWP-IT:D | 20.000 | 23+ | Anfrage senden |
MT29F4G08ABADAWP-IT:D | 10.000 | Anfrage senden | |
MT29F4G08ABADAWP-IT:D TR | 1.000 | Anfrage senden | |
MT29F4G08ABADAWP-IT:D TR | 2.000 | Anfrage senden | |
MT29F4G08ABADAWP-IT:D TR | 100,000+ | Anfrage senden | |
MT29F4G08ABADAWP-IT:D TR | 100,000+ | Anfrage senden | |
MT29F4G08ABADAWP-IT:D | 5.000 | 23+ | Anfrage senden |
MT29F4G08ABADAWP-IT:D | 400 | Anfrage senden | |
MT29F4G08ABADAWP-IT:D | 8.000 | 23+ | Anfrage senden |
MT29F4G08ABADAWP-IT:D | 30.000 | 23+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
MT29F4G08AACWC-ETC | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
EN27LN4G08-25TIP | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
H27U4G8F2BTR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
H27U4G8F2DTR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
H27U4G8F2DTR-BIR | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
H27U4G8F2ETR-BI | TSOP-48 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
IS34ML04G081-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML04G081-TLI-TR | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML04G084-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML04G084-TLI-TR | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML04G088-TLI | TSOP-48 | 3.3 V | 25 NS | -40 C~+85 C |