MT48H4M16LFB4-75ITH

Produktübersicht

IC Picture

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Hersteller-Nummer MT48H4M16LFB4-75ITH
Hersteller MICRON
Produktkategorie SDRAM MOBILE
IC-Code 4MX16 SD
Andere Bezeichnungen MT48H4M16LFB4-75 IT:H
MT48H4M16LFB4-75IT:H TR
MT48H4M16LFB475ITHTR

Produktbeschreibung

Gehäuse FBGA-54
Verpackung
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur -40 C~+85 C
Geschwindigkeit 133 MHZ
Standard Stückzahl
Abmessungen Karton

General Description The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random access memory containing 67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16’s 16,777,216-bit banks is organized as 4,096 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0–A11 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The SDRAM provides for programmable read or write burst lengths of 1, 2, 4, or 8 locations with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The 64Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also enables the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the PRECHARGE cycles and provide seamless high-speed, random-access operation. The 64Mb SDRAM is designed to operate in 1.8V, low-power memory systems. An auto refresh mode is provided, along with a power-saving, deep power-down mode. All inputs and outputs are LVTTL-compatible.

Verfügbare Angebote

Teilenummer Menge Datecode
MT48H4M16LFB4-75 IT:H 492 09+ Anfrage senden
MT48H4M16LFB4-75 IT:H 0 Anfrage senden
MT48H4M16LFB4-75IT:H TR 11.154 10+ Anfrage senden
MT48H4M16LFB4-75 IT:H 11.734 10+ Anfrage senden
MT48H4M16LFB4-75ITH 40.000 2009+ Anfrage senden
MT48H4M16LFB475ITHTR 150 10+ Anfrage senden
MT48H4M16LFB4-75 IT:H 1.760 Anfrage senden
MT48H4M16LFB4-75 IT:H 0 Anfrage senden
MT48H4M16LFB4-75 IT:H 760 Anfrage senden
MT48H4M16LFB4-75 IT:H 1.000 2012 Anfrage senden

Cross Reference

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
K4M641633K-BN75000 FBGA-54 3.0V/3.3V 133 MHZ -25 C~+85 C

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
FMS6416LBH-75EI FBGA-54 1.8 V 133 MHZ -40 C~+85 C
IS42VM16400G-75BLI FBGA-54 1.8 V 133 MHZ -40 C~+85 C
IS42VM16400K-75BLI FBGA-54 1.8 V 133 MHZ -40 C~+85 C
IS42VM16400M-75BI FBGA-54 1.8 V 133 MHZ -40 C~+85 C
IS42VM16400M-75BLA1 FBGA-54 1.8 V 133 MHZ -40 C~+85 C
IS42VM16400M-75BLI FBGA-54 1.8 V 133 MHZ -40 C~+85 C
IS42VS16400E-75BLI FBGA-54 1.8 V 133 MHZ -40 C~+85 C
IS42VS16400L-75BLI FBGA-54 1.8 V 133 MHZ -40 C~+85 C
MT48H4M16LFB3-75 IT ES:H FBGA-54 1.8 V 133 MHZ -40 C~+85 C
MT48H4M16LFB3-75 IT:H FBGA-54 1.8 V 133 MHZ -40 C~+85 C