| Gehäuse |
UBGA-144
|
| Verpackung |
|
| RoHS |
Leaded
|
| Spannungsversorgung |
1.8 V
|
| Betriebstemperatur |
0 C~+85 C
|
| Geschwindigkeit |
300 MHZ
|
| Standard Stückzahl |
|
| Abmessungen Karton |
|
| Number Of Words |
8M
|
| Bit Organization |
x36
|
| Density |
288M
|
| Production Status |
Production
|
| Product Family |
RLDRAM 1 & 2 Memory
|
| Version |
F
|
General Description
The Micron® reduced latency DRAM (RLDRAM®) 2 is a high-speed memory device designed for high-bandwidth data storage such as telecommunications, networking, and
cache applications. The chip’s 8-bank architecture is optimized for sustainable highspeed operation.
The DDR I/O interface transfers two data words per clock cycle at the I/O balls. Output
data is referenced to the free-running output data clock.
Commands, addresses, and control signals are registered at every positive edge of the
differential input clock, while input data is registered at both positive and negative
edges of the input data clock(s).
Read and write accesses to the device are burst-oriented. The burst length (BL) is programmable to 2, 4, or 8 by setting the mode register.
The device is supplied with 2.5V and 1.8V for the core and 1.5V or 1.8V for the output
drivers.
Bank-scheduled refresh is supported with the row address generated internally.
The 144-ball package is used to enable ultra high-speed data transfer rates and a simple
upgrade path from early generation devices.
