Gehäuse | TSOP2(44/50) |
Verpackung | |
RoHS | Leaded |
Spannungsversorgung | 3.3 V |
Betriebstemperatur | 0 C~+70 C |
Geschwindigkeit | 60 NS |
Standard Stückzahl | |
Abmessungen Karton |
GENERAL DESCRIPTION The 1 Meg x 16 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two CAS# pins (CASL# and CASH#). These function identically to a single CAS# on other DRAMs in that either CASL# or CASH# will generate an internal CAS#.
Teilenummer | Menge | Datecode | |
---|---|---|---|
MT4LC1M16C3TG6 | 172 | DC97 | Anfrage senden |
MT4LC1M16C3TG6 | 37 | DC00+ | Anfrage senden |
MT4LC1M16C3TG6 | 37 | 0 | Anfrage senden |
MT4LC1M16C3TG6 | 172 | 97 | Anfrage senden |
MT4LC1M16C3TG6 | 37 | DC00 | Anfrage senden |
MT4LC1M16C3TG6 | 300 | 5 | Anfrage senden |
MT4LC1M16C3TG6 | 20.000 | 10+ | Anfrage senden |
MT4LC1M16C3TG6 | 4.000 | Anfrage senden | |
MT4LC1M16C3TG6 | 49 | DC00 | Anfrage senden |
MT4LC1M16C3TG6 | 4.500 | 10+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
GM71V16160CT-6 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
GM71V16160CT-60 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
GM71V18160CT-6 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
GM71V18160CT-60 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
GM71VS16160CLT-6 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
GM71VS16160CLT60 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
GM71VS18160CLT-60 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
GM71VS18160CT-60 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
HM51W16160-LTT-6 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |
HM51W161600TT6 | TSOP2(44/50) | 3.3 V | 60 NS | 0 C~+70 C |