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| Hersteller-Nummer | TC58NYG0S3EBAI4LRH |
| Hersteller | KIOXIA |
| Produktkategorie | FLASH-NAND |
| IC-Code | 128MX8 NAND SLC |
| Gehäuse | BGA-63 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 25 NS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 16M |
| Bit Organization | x8 |
| Density | 128M |
| Mono Stack | Single Chip |
| Nand Type | NAND |
| Cell Level | 2 Level( 1 bits/cell ) |
| Page Size | 2KB |
| Design Rule | 43 nm |
| Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 12 x 17 x 1.0, BGA[mm]: 60 balls, 9 x 11 |
| Additional Code | LRH |
| Package Material | Lead-Free: Yes, Halogen-Free: Yes |
| Channel | Single, # of CE 1 |
| Block Size | 128KB |
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| TC58NYG0S3EBAI4LRH | 1.050 | Anfrage senden | |
| TC58NYG0S3EBAI4LRH | 1.050 | Anfrage senden | |
| TC58NYG0S3EBAI4LRH | 1.050 | 12 | Anfrage senden |
| TC58NYG0S3EBAI4LRH | 1.050 | 2012 | Anfrage senden |
| TC58NYG0S3EBAI4LRH | 5.000 | Anfrage senden | |
| TC58NYG0S3EBAI4LRH | 1.077 | Anfrage senden |
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H27S1G8F2BFR-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| H27S1G8F2BFR-BI NBSP | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| H27S1G8F2BFR-BIR | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| H27S1G8F2CFE-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| H27S1G8F2CFR-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| IS35MW01G084-BLA1 | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| K9F1G08R08-JIBO | FBGA-63 | 1.65V~1.95V | 25 NS | -40 C~+85 C |
| K9F1G08R0A-/B-JIB | FBGA-63 | 1.65V~1.95V | 25 NS | -40 C~+85 C |
| K9F1G08R0A-JIB0000 | FBGA-63 | 1.65V~1.95V | 25 NS | -40 C~+85 C |
| K9F1G08R0A/B-JIB0 | FBGA-63 | 1.65V~1.95V | 25 NS | -40 C~+85 C |