TH58NYG2S3HBAI4
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | TH58NYG2S3HBAI4 |
| Hersteller | KIOXIA |
| Produktkategorie | FLASH-NAND |
| IC-Code | 512MX8 NAND SLC |
| Andere Bezeichnungen | TH58NYG2S3HBAI4 TRAY |
Produktbeschreibung
| Gehäuse | BGA-63 |
| Verpackung | |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 25 NS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Mono Stack | Multi Chip |
| Nand Type | NAND |
| Cell Level | 2 Level( 1 bits/cell ) |
| Page Size | 2KB |
| Design Rule | 24nm B-type |
| Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 12 x 17 x 1.0, BGA[mm]: 60 balls, 9 x 11 |
| Package Material | Lead-Free: Yes, Halogen-Free: Yes |
| Channel | Single, # of CE 1 |
| Block Size | 128KB |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| TH58NYG2S3HBAI4 | 2.089 | 19+ | Anfrage senden |
| TH58NYG2S3HBAI4 TRAY | 798 | Anfrage senden | |
| TH58NYG2S3HBAI4 | 2.100 | Anfrage senden | |
| TH58NYG2S3HBAI4 | 10 | Anfrage senden | |
| TH58NYG2S3HBAI4 | 10 | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| MT29F4G08ABBDAH4-IT:D | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-IT:D TR | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-ITD | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-ITDTR | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-ITE:D | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-ITEES:D | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-ITES:D | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-ITX | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-ITX:D | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
| MT29F4G08ABBDAH4-ITX:D TR | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |