TH58NYG3S0HBAI6
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | TH58NYG3S0HBAI6 |
| Hersteller | KIOXIA |
| Produktkategorie | FLASH-NAND |
| IC-Code | 1GX8 NAND SLC |
Produktbeschreibung
| Gehäuse | BGA-67 |
| Verpackung | TRAY |
| RoHS | RoHS |
| Spannungsversorgung | 1.8 V |
| Betriebstemperatur | -40 C~+85 C |
| Geschwindigkeit | 25 NS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Mono Stack | Multi Chip |
| Nand Type | NAND |
| Cell Level | 2 Level( 1 bits/cell ) |
| Page Size | 4KB |
| Design Rule | 24nm B-type |
| Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 13 x 17 x 1.04, BGA[mm]: 60 balls, 8.5 x 13 *1 |
| Package Material | Lead-Free: Yes, Halogen-Free: Yes |
| Channel | Single, # of CE 1 |
| Block Size | 256KB |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| TH58NYG3S0HBAI6 | 1.014 | Anfrage senden | |
| TH58NYG3S0HBAI6 | 5.000 | 24+25+ | Anfrage senden |
| TH58NYG3S0HBAI6 | 1.003 | 22+ | Anfrage senden |