Bilder dienen nur der Illustration
Hersteller-Nummer | TH58NYG3S0HBAI6 |
Hersteller | KIOXIA |
Produktkategorie | FLASH-NAND |
IC-Code | 1GX8 NAND SLC |
Gehäuse | BGA-67 |
Verpackung | |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 25 NS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Mono Stack | Multi Chip |
Nand Type | NAND |
Cell Level | 2 Level( 1 bits/cell ) |
Page Size | 4KB |
Design Rule | 24nm B-type |
Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 13 x 17 x 1.04, BGA[mm]: 60 balls, 8.5 x 13 *1 |
Package Material | Lead-Free: Yes, Halogen-Free: Yes |
Channel | Single, # of CE 1 |
Block Size | 256KB |
Teilenummer | Menge | Datecode | |
---|---|---|---|
TH58NYG3S0HBAI6 | 1.003 | 22+ | Anfrage senden |