| ZKB409/004-03-PF |
VAC |
|
494
|
Leaded |
| PID 12 Z A |
EURO-MODUL |
OTHER |
363
|
OTHER / PID12 / Leaded |
| LT1764ET |
ANALOG DEVICES/ADI/亞德諾 |
PMIC/POWER MANAGEMENT |
300
|
PMIC/POWER MANAGEMENT / LT1764 / TO-220-5 / 200 MA / -40 C~+125 C / RoHS / 20V |
| LT1762EMS8 |
ANALOG DEVICES/ADI/亞德諾 |
PMIC/POWER MANAGEMENT |
500
|
PMIC/POWER MANAGEMENT / LT1762 / MSOP-8 / 150 MA / -40 C~+125 C / Leaded / 1.22V~20V |
| ESM112 39 |
THOMSON CSF |
RECTIFIER |
68
|
RECTIFIER / ESM112 / Leaded |
| MSA 8 |
GENERAL-INSTRUMENTS |
OTHER |
750
|
OTHER / MSA8 / Leaded |
| H11A5 |
LITEON/光寶 |
OPTOISOLATERS |
876
|
OPTOISOLATERS / 11A5 / DIP-6 / 5300 VRMS / -55 C~+100 C / Leaded / 1.1 V |
| DALE RH -50 / 400 |
VISHAY/威世 |
RESISTOR |
2,000
|
RESISTOR / RH50 / Leaded |
| DALE RH 25 / 33 |
VISHAY/威世 |
RESISTOR |
1,094
|
RESISTOR / RH25 / Leaded |
| TC554001AFI-70L |
TOSHIBA/東芝 |
SRAM-ASYNC |
4,340
|
SRAM-ASYNC / 512KX8 ASYNC / SOP-32 / 70 NS / -40 C~+85 C / Leaded / 5.0 V |
| MTB10N40ET4 |
ON-SEMICONDUCTOR/安森美 |
MOSFET |
4,882
|
MOSFET / 10N40 / D2PAK-3 / 10 A / -55 C~+150 C / Leaded / 400 V / EOL |
| TC551001CFI-85L |
TOSHIBA/東芝 |
SRAM-ASYNC |
6,000
|
SRAM-ASYNC / 128KX8 ASYNC / SOP-32 / 85 NS / -40 C~+85 C / Leaded / 5.0 V |
| SPF3165KRLRA |
MOTOROLA |
TRANSISTOR |
4,000
|
TRANSISTOR / SPF3165 / TO-92 / Leaded / TAPE ON REEL / 2000 pcs |
| M29F040B-70K6 |
STM/意法半导体 |
FLASH-NOR |
7,576
|
FLASH-NOR / 29F040 / PLCC-32 / 70 NS / -40 C~+85 C / Leaded / 5.0 V / TUBE / 320 pcs |
| BSS101 |
INFINEON+CYPRESS/英飞凌 |
TRANSISTOR |
2,670
|
TRANSISTOR / BSS101 / Leaded |
| IS42S16320F-5TL |
ISSI/矽成 |
SDRAM |
63
|
SDRAM / 32MX16 SD / TSOP2(54) / 200 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| IS46TR81280CL-107MBLA25 |
ISSI/矽成 |
DDR3 SDRAM |
3
|
DDR3 SDRAM / 128MX8 DDR3 / FBGA-78 / 1866 MBPS / -40 C~+115 C / RoHS / 1.35 V / TRAY |
| IS42S16320D-6BL |
ISSI/矽成 |
SDRAM |
1
|
SDRAM / 32MX16 SD / FBGA-54 / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs 2.0 kg 36*9*16* cm |
| IS46LD16640C-25BLA1 |
ISSI/矽成 |
LPDDR2 MOBILE |
10
|
LPDDR2 MOBILE / 64MX16 LPDDR2 / FBGA-134 / 800 MBPS / -40 C~+85 C / RoHS / 1.2 V / TRAY |
| IS46LD32320C-25BLA1 |
ISSI/矽成 |
LPDDR2 MOBILE |
13
|
LPDDR2 MOBILE / 32MX32 LPDDR2 / PBGA-168 / 800 MBPS / -40 C~+85 C / RoHS / 1.2 V / TRAY |
| IS43R86400F-5TLI |
ISSI/矽成 |
DDR1 SDRAM |
33
|
DDR1 SDRAM / 64MX8 DDR1 / TSOP2(66) / 200 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / 1080 pcs |
| IS42SM32200M-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
567
|
SDRAM MOBILE / 2MX32 SD / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS43LR32200C-6BLI |
ISSI/矽成 |
LPDDR1 MOBILE |
45
|
LPDDR1 MOBILE / 2MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS42S32160F-6TLI |
ISSI/矽成 |
SDRAM |
18
|
SDRAM / 16MX32 SD / TSOP2(86) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| IS46LD32320C-25BLA2 |
ISSI/矽成 |
LPDDR2 MOBILE |
30
|
LPDDR2 MOBILE / 32MX32 LPDDR2 / PBGA-168 / 800 MBPS / -40 C~+105 C / RoHS / 1.2 V / TRAY |