| IS42S32800B-7B |
ISSI/矽成 |
SDRAM |
2,391
|
SDRAM / 8MX32 SD / BGA-90 / 143 MHZ / 0 C~+85 C / Leaded / 3.3 V / TRAY |
| IS42S16100E-7BLI |
ISSI/矽成 |
SDRAM |
7,501
|
SDRAM / 1MX16 SD / BGA-60 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2860 pcs |
| K9WAG08U1B-PCB0(ON BOARD) |
SAMSUNG/三星 |
FLASH-NAND |
224
|
FLASH-NAND / 2GX8 NAND SLC / TSOP-48 / 1 MHZ / 0 C~+85 C / RoHS / 2.7V-3.6V / OTHER |
| MT46V32M16CY-5B:J |
MICRON/美光 |
DDR1 SDRAM |
7
|
DDR1 SDRAM / 32MX16 DDR1 / FBGA-60 / 200 MHZ / 0 C~+70 C / RoHS / 2.5 V / TRAY |
| IS42S16320D-7TLI |
ISSI/矽成 |
SDRAM |
1
|
SDRAM / 32MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs 2.04 kg 38*9*16 cm |
| THGBMDG5D1LBAIT |
KIOXIA/鎧俠 |
FLASH-EMMC |
20
|
FLASH-EMMC / 4GB EMMC / WFBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 2.7V~3.6V / TRAY / EOL / 840 pcs |
| IS42S32160D-6BL |
ISSI/矽成 |
SDRAM |
1
|
SDRAM / 16MX32 SD / FBGA-90 / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 240 pcs |
| IS42S16160C-7TL |
ISSI/矽成 |
SDRAM |
681
|
SDRAM / 16MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| IS43DR82560B-3DBLI |
ISSI/矽成 |
DDR2 SDRAM |
3,019
|
DDR2 SDRAM / 256MX8 DDR2 / FBGA-60 / 667 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43DR81280B-3DBI |
ISSI/矽成 |
DDR2 SDRAM |
10,822
|
DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 667 MBPS / -40 C~+85 C / Leaded / 1.8 V |
| IS45S32400E-7TLA1 |
ISSI/矽成 |
SDRAM |
244
|
SDRAM / 4MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS45S16800E-7BLA2 |
ISSI/矽成 |
SDRAM |
1,326
|
SDRAM / 8MX16 SD / FBGA-54 / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY / EOL |
| IS42S32800B-7BLI |
ISSI/矽成 |
SDRAM |
115
|
SDRAM / 8MX32 SD / LFBGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1440 pcs |
| IS42S32800B-7TL |
ISSI/矽成 |
SDRAM |
816
|
SDRAM / 8MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| IS42S32400E-6TL |
ISSI/矽成 |
SDRAM |
33
|
SDRAM / 4MX32 SD / TSOP2(86) / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| IS42S32400E-6BL |
ISSI/矽成 |
SDRAM |
1,197
|
SDRAM / 4MX32 SD / TFBGA-90 / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 4800 pcs |
| IS42S16320D-5TL |
ISSI/矽成 |
SDRAM |
33
|
SDRAM / 32MX16 SD / TSOP2(54) / 200 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| IS42S16160D-6BL |
ISSI/矽成 |
SDRAM |
7,207
|
SDRAM / 16MX16 SD / BGA-54 / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| IS41LV16105C-50TI |
ISSI/矽成 |
DRAM |
1,005
|
DRAM / 1MX16 FP / TSOP2(44/50) / 50 NS / -40 C~+85 C / Leaded / 3.3 V / TRAY / EOL / 1170 pcs |
| IS41C16105C-50TI |
ISSI/矽成 |
DRAM |
8,295
|
DRAM / 1MX16 FP / TSOP2(44/50) / 50 NS / -40 C~+85 C / Leaded / 5.0 V / TRAY / EOL / 1170 pcs |
| K4B4G0846D-BYK0TCV |
SAMSUNG/三星 |
DDR3L SDRAM |
156
|
DDR3L SDRAM / 512MX8 DDR3L / FBGA-78 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35 V / TAPE ON REEL |
| IS43R32160D-5BLI |
ISSI/矽成 |
DDR1 SDRAM |
1,159
|
DDR1 SDRAM / 16MX32 DDR1 / BGA-144 / 200 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY |
| IS42S16320D-7BL |
ISSI/矽成 |
SDRAM |
27
|
SDRAM / 32MX16 SD / FBGA-54 / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |
| T523G337M010APE150 |
KEMET/基美特 |
CAPACITOR |
6,332
|
CAPACITOR / 523G337 / SMD / 330 UF / -55 C~+85 C / RoHS / 10.0V / TAPE ON REEL / 1000 pcs |
| IS42S16160D-6TLI |
ISSI/矽成 |
SDRAM |
694
|
SDRAM / 16MX16 SD / TSOP2(54) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 108 pcs |