| EDS5104ABTA-75 |
MICRON/美光 |
SDRAM |
84,675
|
SDRAM / 128MX4 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / Leaded / 3.3 V / TRAY / EOL / 540 pcs 1.5 kg 38*18*8 cm |
| HY628100BLLT1-55DR |
SK HYNIX/海力士 |
SRAM |
4,000
|
SRAM / 128KX8 SRAM / TSOP-32 / 55 NS / 0 C~+70 C / Leaded / 5.0 V / TAPE ON REEL / 1000 pcs 1.18 kg 35*35*7 cm |
| M5M51008BFP-55LL |
RENESAS/瑞萨 |
SRAM |
1,000
|
SRAM / 128KX8 SRAM / TSOP-32 / 55 NS / 0 C~+70 C / Leaded / 5.0 V |
| HY62UF16404E-DF55IDR |
SK HYNIX/海力士 |
SRAM |
4,000
|
SRAM / 256KX16 SRAM / BGA / -40 C~+85 C / Leaded / 2.7V~3.3V / TAPE ON REEL / 2000 pcs 1.0 kg |
| IS61LV256AL-10TLI |
ISSI/矽成 |
SRAM |
1,152
|
SRAM / 32KX8 FAST / TSOP-28 / 10 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2340 pcs 2.0 kg |
| IS62C1024AL-35TI |
ISSI/矽成 |
SRAM |
1,489
|
SRAM / 128KX8 SRAM / TSOP-32 / 35 NS / -40 C~+85 C / Leaded / 5.0 V / TRAY / EOL / 156 pcs |
| TC55V2001FI-85L |
TOSHIBA/東芝 |
SRAM |
1,000
|
SRAM / 256KX8 SRAM / SOP / Leaded |
| CS18LV00645ACR55 |
CHIPLUS/晶發 |
SRAM |
743
|
SRAM / 8KX8 SRAM / SOP-28 / 55 NS / 0 C~+70 C / RoHS / 5.0 V |
| IS62WV1288BLL-55QLI |
ISSI/矽成 |
SRAM-ASYNC |
30
|
SRAM-ASYNC / 128KX8 SRAM / SOP-32 / 55 NS / -40 C~+85 C / RoHS / 1.65V-3.6V / TRAY / 840 pcs |
| HY628400ALG-70 |
SK HYNIX/海力士 |
SRAM |
1,000
|
SRAM / 512KX8 SRAM / SOP-32 / 70 NS / Leaded / 5.0 V / TAPE ON REEL |
| AS7C1024-15JC |
ALLIANCE-MEMORY |
SRAM |
258
|
SRAM / 128KX8 FAST / SOJ / 0 C~+85 C / Leaded / 5.0 V / TUBE |
| IC62LV1024LL-55H |
ISSI/矽成 |
SRAM |
6,000
|
SRAM / 128KX8 SRAM / STSOP / Leaded / 3.3 V / EOL / 2340 pcs 2.31 kg 37*16*9 cm |
| K6T1008C2C-GB70000 |
SAMSUNG/三星 |
SRAM |
37
|
SRAM / 128KX8 SRAM / SOP / 0 C~+85 C / Leaded / 5.0 V / TUBE |
| KM68V1000CLG-7L |
SAMSUNG/三星 |
SRAM |
4
|
SRAM / 128KX8 SRAM / SOP / Leaded |
| KM681000CLGI-5L |
SAMSUNG/三星 |
SRAM |
22
|
SRAM / 128KX8 SRAM / SOP / Leaded |
| IS63LV1024-12J |
ISSI/矽成 |
SRAM |
43
|
SRAM / 128KX8 FAST / SOJ-32 / 12 NS / 0 C~+70 C / Leaded / 3.3 V / EOL |
| K6T1008C2C-TF70000 |
SAMSUNG/三星 |
SRAM |
3
|
SRAM / 128KX8 SRAM / TSOP / -40 C~+85 C / Leaded / 5.0 V / TRAY |
| M470T3354CZ3-CD5 |
SMART |
DDR1 SO-DIMM |
239
|
DDR1 SO-DIMM / 256MB DDR1 SODIMM / 200-PIN / 0 C~+85 C / RoHS / 10 pcs 0.1 kg 5*17*10 cm |
| K7N403609B-QC25 |
SAMSUNG/三星 |
SRAM-SYNC |
4,595
|
SRAM-SYNC / 128KX36 PBNT / TQFP-100 / 250 MHZ / -25 C~+85 C / Leaded / 3.3 V / TRAY / 360 pcs 1.7 kg 37*17*7 cm |
| MT46V16M8TG-5B:D |
MICRON/美光 |
DDR1 SDRAM |
4,000
|
DDR1 SDRAM / 16MX8 DDR1 / TSOP-66 / 200 MHZ / 0 C~+85 C / Leaded / 2.5 V / 1000 pcs 1.6 kg 37*8*35 cm |
| MT4C1M16C3TG-6 |
MICRON/美光 |
DRAM |
9,309
|
DRAM / 1MX16 FP / TSOP2(44/50) / 60 NS / 0 C~+70 C / Leaded / 5.0 V / TAPE ON REEL / 1000 pcs 1.6 kg 37*35*8 cm |
| MT46V16M8TG-6T:D |
MICRON/美光 |
DDR1 SDRAM |
12,000
|
DDR1 SDRAM / 16MX8 DDR1 / TSOP-66 / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / 1000 pcs 1.54 kg 37*35*8 cm |
| MT46V32M8TG-6T:K |
MICRON/美光 |
DDR1 SDRAM |
1,000
|
DDR1 SDRAM / 32MX8 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / 1000 pcs 1.6 kg 37*35*8 cm |
| MT46V16M8P-6T:D |
MICRON/美光 |
DDR1 SDRAM |
4,000
|
DDR1 SDRAM / 16MX8 DDR1 / TSOP-66 / 0 C~+85 C / RoHS / 2.5 V / 1000 pcs 1.6 kg 37*8*35 cm |
| MT46V32M4TG-6T:D |
MICRON/美光 |
DDR1 SDRAM |
25,000
|
DDR1 SDRAM / 32MX4 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / 1000 pcs 1.54 kg 37*35*8 cm |