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制造商IC编号 | EDB1332BDBH-1DAAT-F-R |
厂牌 | MICRON/美光 |
IC 类别 | LPDDR2 MOBILE |
IC代码 | 32MX32 LPDDR2 |
共通IC编号 | EDB1332BDBH-1DAAT-F-RTR |
脚位/封装 | FBGA-134 |
外包装 | TAPE ON REEL |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.14V~1.95 |
温度规格 | -40 C~+105 C |
速度 | 1066 MBPS |
标准包装数量 | 1000 |
标准外箱 |
General Description The Low-Power DDR2 SDRAM (LPDDR2) is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits. The LPDDR2-S4 device is internally configured as an eight-bank DRAM. Each of the x16’s 134,217,728-bit banks is organized as 8192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks is organized as 8192 rows by 512 columns by 32 bits.
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
EDB1332BDBH-1DAAT-F-R | 1 | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 5,200 | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 38,000 | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 770 | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 30,400 | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 99,340 | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 100,000+ | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 750 | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 10,000 | 索取报价 | |
EDB1332BDBH-1DAAT-F-R | 50,000 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
EDB1332BDBH-1DAAT-F | FBGA-134 | 1.14V~1.95 | 1066 MBPS | -40 C~+105 C |
EDB1332BDBH-1DAAT-F-D | FBGA-134 | 1.14V~1.95 | 1066 MBPS | -40 C~+105 C |
MT42L32M32D1AC-18 AAT:C | FBGA-134 | 1.14V~1.3V | 1066 MBPS | -40 C~+105 C |
MT42L32M32D1AC-18 AAT:C DO NOT | FBGA-134 | 1.14V~1.3V | 1066 MBPS | -40 C~+105 C |
MT42L32M32D1HE-18 AAT:C | FBGA-134 | 1.14V~1.3V | 1066 MBPS | -40 C~+105 C |
MT42L32M32D1HE-18 AAT:D | FBGA-134 | 1.14V~1.3V | 1066 MBPS | -40 C~+105 C |
MT42L32M32D1HE-18 AAT:D DO NOT | FBGA-134 | 1.14V~1.3V | 1066 MBPS | -40 C~+105 C |
MT42L32M32D1HE-18 AAT:D TR | FBGA-134 | 1.14V~1.3V | 1066 MBPS | -40 C~+105 C |
MT42L32M32D1HE-18AAT:ES:D | FBGA-134 | 1.14V~1.3V | 1066 MBPS | -40 C~+105 C |
MT42L32M32D1NT-18 AAT ES:C | FBGA-134 | 1.14V~1.3V | 1066 MBPS | -40 C~+105 C |