| 脚位/封装 | TSOP2 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 3.3 V |
| 温度规格 | normal power & commercial temp |
| 速度 | 166MHz 3-3-3 |
| 标准包装数量 | 960 |
| 标准外箱 | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Package Material | lead & halogen free |
| No Of Banks | 4 banks |
| Hynix Memory | H |
| Die Generation | 8th |
| Product Family | DRAM |
| Product Mode | SDR |
| Shipping Method | tray |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| H57V1262GTR-60C | 30 | 1119+ | 索取报价 |
| H57V1262GTR-60C | 127 | 10+ | 索取报价 |
| H57V1262GTR-60C | 960 | 12+ | 索取报价 |
| H57V1262GTR-60C | 980 | 10+ | 索取报价 |
| H57V1262GTR-60C | 311 | 11+12+13+ | 索取报价 |
| H57V1262GTR-60C | 852 | 10+ | 索取报价 |
| H57V1262GTR-60C | 128 | 10+ | 索取报价 |
| H57V1262GTR-60C | 1,895 | 2017+ | 索取报价 |
| H57V1262GTR-60C | 2,880 | 13+ | 索取报价 |
| H57V1262GTR-60C | 0 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| W9812G6JH-6 | TSOP2(54) | 3.3 V | 166 MHZ | 0 C~+70 C |