| 脚位/封装 | TSOP2 |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | normal power & commercial temp |
| 速度 | 133MHz 3-3-3 |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Package Material | lead & halogen free |
| No Of Banks | 4 banks |
| Hynix Memory | H |
| Die Generation | 8th |
| Product Family | DRAM |
| Product Mode | SDR |
| Shipping Method | tray |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| H57V1262GTR-75C | 842 | 1020+ | 索取报价 |
| H57V1262GTR-75C | 104 | 12+ | 索取报价 |
| H57V1262GTR-75C | 1,866 | 10+ | 索取报价 |
| H57V1262GTR-75C | 960 | 索取报价 | |
| H57V1262GTR-75C | 5,760 | 索取报价 | |
| H57V1262GTR-75C | 342 | 1104+ | 索取报价 |
| H57V1262GTR-75C | 1,368 | 索取报价 | |
| H57V1262GTR-75C | 11,500 | 10+ | 索取报价 |
| H57V1262GTR-75C | 72 | 10+ | 索取报价 |
| H57V1262GTR-75C | 1,259 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HY57V281620FTP-H-C | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |