| 脚位/封装 | TSOP2 |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | normal power & commercial temp |
| 速度 | 200MHz 3-3-3 |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Package Material | lead & halogen free |
| No Of Banks | 4 banks |
| Hynix Memory | H |
| Die Generation | 8th |
| Product Family | DRAM |
| Product Mode | SDR |
| Shipping Method | tray |