H5AN4G6NBJR-XNI
产品概述
图片仅供参考
| 制造商IC编号 | H5AN4G6NBJR-XNI |
| 厂牌 | SK HYNIX/海力士 |
| IC 类别 | DDR4 SDRAM |
| IC代码 | 256MX16 DDR4 |
产品详情
| 脚位/封装 | FBGA |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 1.2 V |
| 温度规格 | -40 C~+95 C |
| 速度 | 1600 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Operating Temperature | Industrial Temp(-40°C ~ 95°C) & Normal Power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| No Of Banks | Non-TSV |
| Die Generation | 3rd |
| Product Family | DRAM |
| Shipping Method | tray |