H5AN4G8NAFR

产品概述

IC Picture

图片仅供参考

制造商IC编号 H5AN4G8NAFR
厂牌 SK HYNIX/海力士
IC 类别 DDR4 SDRAM
IC代码 512MX8 DDR4

产品详情

脚位/封装 FBGA-78
外包装
无铅/环保 无铅/环保
电压(伏) 1.2 V
温度规格 0 C~+85 C
速度
标准包装数量
标准外箱

Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

供应链有货

IC 编号 数量 生产年份
H5AN4G8NAFR 15,000 索取报价