H5DU1262GTR-E3I
产品概述
图片仅供参考
| 制造商IC编号 | H5DU1262GTR-E3I |
| 厂牌 | SK HYNIX/海力士 |
| IC 类别 | DDR1 SDRAM |
| IC代码 | 8MX16 DDR1 |
产品详情
| 脚位/封装 | TSOP2 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 2.5 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 200 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Operating Temperature | industrial temperature(-40°C~85°C) & normal power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| Die Generation | 8th |
| No Of Banks | 4 banks |
| Product Family | DRAM |
| Shipping Method | tray |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| IS43R16800E -5TI | TSOP2 | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R16800E -5TLA1 | TSOP2 | 2.5 V | 200 MHZ | -40 C~+85 C |