H5TC1G83EFR

产品概述

IC Picture

图片仅供参考

制造商IC编号 H5TC1G83EFR
厂牌 SK HYNIX/海力士
IC 类别 DDR3L SDRAM
IC代码 128MX8 DDR3L

产品详情

脚位/封装 FBGA-78
外包装
无铅/环保 无铅/环保
电压(伏) 1.35V
温度规格
速度
标准包装数量
标准外箱

Description The H5TC1G83EFR-xxA(I) and H5TC1G63EFR-xxA(I) are a 1Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.) SK Hynix 1Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.