| 脚位/封装 |
FBGA-96
|
| 外包装 |
TRAY
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
1.35V
|
| 温度规格 |
-40 C~+95 C
|
| 速度 |
1866 MBPS
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
256M
|
| Bit Organization |
x16
|
| Density |
4G
|
| Operating Temperature |
industrial temperature(-40°C~85°C) & normal power
|
| Package Material |
lead & halogen free(ROHS compliant)
|
| Hynix Memory |
H
|
| Die Generation |
6th
|
| No Of Banks |
8 banks
|
| Product Family |
DRAM
|
| Shipping Method |
tray
|
Description
The H5TC4G63EFR-xxA a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited
for the main memory applications which requires large memory density, high bandwidth and low power
operation at 1.35V. DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.)
SK hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling
edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling
edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling
edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
