| 脚位/封装 |
FBGA-78
|
| 外包装 |
TRAY
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
1.35V
|
| 温度规格 |
0 C~+85 C
|
| 速度 |
1600 MBPS
|
| 标准包装数量 |
960
|
| 标准外箱 |
|
| Number Of Words |
512M
|
| Bit Organization |
x8
|
| Density |
4G
|
| Operating Temperature |
commercial temperature(0°C~85°C) & 1.35 VDD power
|
| Package Material |
lead & halogen free(ROHS compliant)
|
| Hynix Memory |
H
|
| Die Generation |
5th
|
| No Of Banks |
8 banks
|
| Product Family |
DRAM
|
| Shipping Method |
tray
|
Description
The H5TC4G43AFR-xxA, H5TC4G83AFR-xxA and H5TC4G63AFR-xxA are a 4Gb low power Double Data Rate
III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large
memory density, high bandwidth and low power operation at 1.35V. DDR3L SDRAM provides backward
compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.)
4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the
CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.
The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
