| 脚位/封装 |
FBGA-96
|
| 外包装 |
TRAY
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
1.5 V
|
| 温度规格 |
0 C~+95 C
|
| 速度 |
1866 MBPS
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
256M
|
| Bit Organization |
x16
|
| Density |
4G
|
| Operating Temperature |
commercial temperature(0°C~85°C) & normal power
|
| Package Material |
lead & halogen free(ROHS compliant)
|
| Hynix Memory |
H
|
| Die Generation |
1st
|
| No Of Banks |
8 banks
|
| Product Family |
DRAM
|
| Shipping Method |
tray
|
Description
The H5TQ4G83MFR-xxC,H5TQ4G63MFR-xxC, H5TQ4G83MFR-xxI, H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxJ
and H5TQ4G63MFR-xxJ are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM,
ideally suited for the main memory applications which requires large memory density and high bandwidth.
Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of
the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of
the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.
The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
