H5TQ4G83AFR-PBC
产品概述
图片仅供参考
| 制造商IC编号 | H5TQ4G83AFR-PBC |
| 厂牌 | SK HYNIX/海力士 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 512MX8 DDR3 |
| 共通IC编号 | H5TQ4G83AFR PBC |
| H5TQ4G83AFR-PBCR |
产品详情
| 脚位/封装 | FBGA-78 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | 0 C~+95 C |
| 速度 | 1600 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Operating Temperature | commercial temperature(0°C~85°C) & normal power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| Die Generation | 2nd |
| No Of Banks | 8 banks |
| Product Family | DRAM |
| Shipping Method | tray |
Description The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EDJ4208BASE-GN-F | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| EDJ4208BBBG-GN-F | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| EDJ4208BEBG-GN-F | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| H5TQ4G83A/BFR-PBC | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| H5TQ4G83A/MFR-PBC | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| H5TQ4G83AFR-PB | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| H5TQ4G83AFR-PBA | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| H5TQ4G83AFR-PBA NO USE | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| H5TQ4G83BFR-PBC | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |
| H5TQ4G83CFR-PBC | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+95 C |