H5TQ4G83AFR-RDC

产品概述

IC Picture

图片仅供参考

制造商IC编号 H5TQ4G83AFR-RDC
厂牌 SK HYNIX/海力士
IC 类别 DDR3L SDRAM
IC代码 512MX8 DDR3

产品详情

脚位/封装 FBGA-78
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.5 V
温度规格 0 C~+95 C
速度 1866 MBPS
标准包装数量
标准外箱
Number Of Words 512M
Bit Organization x8
Density 4G
Operating Temperature commercial temperature(0°C~85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 2nd
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Description The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

供应链有货

IC 编号 数量 生产年份
H5TQ4G83AFR-RDC 600 1401+ 索取报价
H5TQ4G83AFR-RDC 48,884 索取报价
H5TQ4G83AFR-RDC 1 15+ 索取报价
H5TQ4G83AFR-RDC 0 15+ 索取报价
H5TQ4G83AFR-RDC 813 201423 索取报价
H5TQ4G83AFR-RDC 1,600 索取报价
H5TQ4G83AFR-RDC 2,265 201429 索取报价
H5TQ4G83AFR-RDC 0 索取报价
H5TQ4G83AFR-RDC 2,265 1429 索取报价
H5TQ4G83AFR-RDC 346 1429 索取报价

FFFE/互通料号 (形式，腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
H5TQ4G83AFR-H9C/PBC/RDC/TEC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83BFR-RDC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83CFR-H9C/PBC/RDC/TEC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83CFR-RDC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83DFR-RDC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83EFR-RDC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83EFR-RDC 2.67USD FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83EFR-RDC USD FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83EFR-RDC/TEC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C
H5TQ4G83MFR-RDC FBGA-78 1.5 V 1866 MBPS 0 C~+95 C