H5TQ4G83EFR-RDI
产品概述
图片仅供参考
| 制造商IC编号 | H5TQ4G83EFR-RDI |
| 厂牌 | SK HYNIX/海力士 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 512MX8 DDR3 |
产品详情
| 脚位/封装 | FBGA-78 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | -40 C~+95 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | 1600 |
| 标准外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Operating Temperature | industrial temperature(-40°C~85°C) & normal power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| No Of Banks | 8 banks |
| Die Generation | 6th |
| Product Family | DRAM |
| Shipping Method | tray |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| H5TQ4G83EFR-RDI | 28,800 | 2023+ | 索取报价 |
| H5TQ4G83EFR-RDI | 16,000 | DC22+ | 索取报价 |
| H5TQ4G83EFR-RDI | 19,200 | 22/23+ | 索取报价 |
| H5TQ4G83EFR-RDI | 9,000 | 索取报价 | |
| H5TQ4G83EFR-RDI | 32,000 | 22+/23+ | 索取报价 |
| H5TQ4G83EFR-RDI | 17,600 | DC22+ | 索取报价 |
| H5TQ4G83EFR-RDI | 1,200 | 21 | 索取报价 |
| H5TQ4G83EFR-RDI | 30,000 | 21 | 索取报价 |
| H5TQ4G83EFR-RDI | 1,263 | 21+ | 索取报价 |
| H5TQ4G83EFR-RDI | 2,000 | 21+ | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5TQ4G83CFR-RDI | FBGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G83CFR-RDIR | FBGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G83CFR-RDJ | FBGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G83CFR-RDJR | FBGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| H5TQ4G83EFR-RDJ | FBGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| IS43TR85120A-107MB | BGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| IS43TR85120A-107MBA1 | BGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| IS43TR85120A-107MBI | BGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| IS43TR85120A-107MBL-TR | BGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |
| IS43TR85120A-107MBLC | BGA-78 | 1.5 V | 1866 MBPS | -40 C~+95 C |