| 脚位/封装 |
PLCC-32
|
| 外包装 |
|
| 无铅/环保 |
含铅
|
| 电压(伏) |
5.0 V
|
| 温度规格 |
-40 C~+85 C
|
| 速度 |
120 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
DESCRIPTION
The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS
Flash memory device organized as a 512K bytes
of 8 bits each. The device is offered in standard
32-pin PDIP, 32-pin PLCC and 32-pin TSOP packages. It is designed to be programmed and
erased in-system with a 5.0 volt power-supply and
can also be reprogrammed in standard PROM
programmers.
The HY29F040A offers access times of 55 ns, 70
ns, 90 ns, 120 ns and 150 ns. The device has separate chip enable (/CE), write enable (/WE) and output enable (/OE) controls. Hyundai Flash memory
devices reliably store memory data even after
100,000 program/erase cycles.
The HY29F040A is entirely pin and command set
compatible with the JEDEC standard for 4 Megabit Flash memory devices. The commands are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls
the erase and programming circuitry. Write cycles
also internally latch addresses and data needed
for the programming and erase operations.
