HY29F040AT-12
产品详情
| 脚位/封装 | TSOP-32 |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 5.0 V |
| 温度规格 | 0 C~+70 C |
| 速度 | 120 NS |
| 标准包装数量 | |
| 标准外箱 |
DESCRIPTION The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS Flash memory device organized as a 512K bytes of 8 bits each. The device is offered in standard 32-pin PDIP, 32-pin PLCC and 32-pin TSOP packages. It is designed to be programmed and erased in-system with a 5.0 volt power-supply and can also be reprogrammed in standard PROM programmers. The HY29F040A offers access times of 55 ns, 70 ns, 90 ns, 120 ns and 150 ns. The device has separate chip enable (/CE), write enable (/WE) and output enable (/OE) controls. Hyundai Flash memory devices reliably store memory data even after 100,000 program/erase cycles. The HY29F040A is entirely pin and command set compatible with the JEDEC standard for 4 Megabit Flash memory devices. The commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations.
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| AM29F040(B)-120EC | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F040-120EC | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F040-120ECTSOP-32 | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F0400BB-120EC | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F04013-120EC | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F040B-120EC | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F040B-120EC(PROG) | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F040B-120EC-ED | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F040B-120EC50000 | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |
| AM29F040B-120ECT | TSOP-32 | 5.0 V | 120 NS | 0 C~+70 C |