HY57V641620HGT-6DR
产品详情
| 脚位/封装 | TSOP2(54) |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | |
| 速度 | 166 MHz |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 4M |
| Bit Organization | x16 |
| Density | 64M |
| Package Material | normal |
| Hynix Memory | HY |
| Interface | LVTTL |
| Die Generation | 5th Gen. |
| No Of Banks | 4 banks |
| Power Consumption | normal power |
| Shipping Method | tray |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| HY57V641620HGT-6DR | 46,000 | 索取报价 | |
| HY57V641620HGT-6DR | 50,000 | 05 | 索取报价 |
| HY57V641620HGT-6DR | 8,000 | 索取报价 | |
| HY57V641620HGT-6DR | 10,000 | 索取报价 | |
| HY57V641620HGT-6DR | 20,000 | 索取报价 | |
| HY57V641620HGT-6DR | 10,000 | 04+ | 索取报价 |
| HY57V641620HGT-6DR | 10,000 | 2004+ | 索取报价 |
| HY57V641620HGT-6DR | 5,760 | 2004 | 索取报价 |
| HY57V641620HGT-6DR | 30,000 | 04 | 索取报价 |
| HY57V641620HGT-6DR | 6,000 | 索取报价 |