| 脚位/封装 | TSOP2(86) |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0 C~+70 C |
| 速度 | 143 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Hynix Memory | HY |
| Interface | LVTTL |
| Die Generation | 3rd Gen. |
| No Of Banks | 4 banks |
| Power Consumption | normal power |
| Shipping Method | tray |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| ABS2M32SD-7R | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| AS4C2M32S-7TCN | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| AS4C2M32SA-7TCN | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325-7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS-6/7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS-7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS-7 DC:2010 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS7G | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS7G-DR | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| HY57V643220-7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |