| 脚位/封装 | TSOP2(86) |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0 C~+70 C |
| 速度 | 166 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 2M |
| Bit Organization | x32 |
| Density | 64M |
| Package Material | Lead free |
| Hynix Memory | HY |
| Interface | LVTTL |
| Die Generation | 5th Gen. |
| No Of Banks | 4 banks |
| Power Consumption | low power |
| Shipping Method | tray |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| HY57V643220DLTP-6 | 6,358 | 2006+ | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| AS4C2M32S-6TCN | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| AS4C2M32SA-6TCN | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| AS4C2M32SA-6TCNTR | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS643232AFTA-6B-E | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS6432AETA6BE | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS6432AFTA-6B-E | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EDS6432AGTA-6-E | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM638325 60NS TSOP86 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM638325 6NS | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
| EM638325-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |