HY57V651620BTC-10I
产品详情
| 脚位/封装 | TSOP2(54) |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | -40 C~+85 C |
| 速度 | 100 MHZ |
| 标准包装数量 | |
| 标准外箱 | |
| Bit Organization | x16 |
| Hynix Memory | HY |
| Interface | LVTTL |
| Die Generation | 3rd Gen. |
| No Of Banks | 4 banks |
| Power Consumption | normal power |
| Shipping Method | tray |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| HY57V651620BLTC-10SI | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| HY57V651620BLTC10PI | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| HY57V651620BTC-10SI | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| IC42S16400-10TI | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| IS42S16400-10TI | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| IS42S16400-10TIX | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| IS45S16400A-10TLA1 | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| K4S641632D-TI1L000 | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| K4S641632D-TP1H | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |
| K4S641632E-TI/P1H | TSOP2(54) | 3.3 V | 100 MHZ | -40 C~+85 C |