脚位/封装 | TSOP2(86) |
外包装 | TRAY |
无铅/环保 | 含铅 |
电压(伏) | 3.3 V |
温度规格 | 0 C~+70 C |
速度 | 166 MHZ |
标准包装数量 | |
标准外箱 | |
Bit Organization | x32 |
Interface | LVTTL |
Hynix Memory | HY |
No Of Banks | 4 banks |
Die Generation | 3rd Gen. |
Power Consumption | normal power |
Shipping Method | tray |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
EM638325TS6-6G | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
EM638325TS6-6G DC:2010 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
EM638325TSA-6G | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
EM638325TSS-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
EM638325VF-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V643220(C)6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V643220-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V6432200CT-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V643220BATC-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |
HY57V643220BCT-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+70 C |