HY5V26EFT-H
产品详情
| 脚位/封装 | FBGA |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0 C~+70 C |
| 速度 | 133MHz, CL3 3-3-3 |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Hynix Memory | HY |
| Die Generation | 6th Gen. |
| Power Consumption | normal |
| Shipping Method | tray |
| 脚位/封装 | FBGA |
| 外包装 | TRAY |
| 无铅/环保 | 含铅 |
| 电压(伏) | 3.3 V |
| 温度规格 | 0 C~+70 C |
| 速度 | 133MHz, CL3 3-3-3 |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Hynix Memory | HY |
| Die Generation | 6th Gen. |
| Power Consumption | normal |
| Shipping Method | tray |