IS43DR16640B-3DBL

产品概述

IC Picture

图片仅供参考

制造商IC编号 IS43DR16640B-3DBL
厂牌 ISSI/矽成
IC 类别 DDR2 SDRAM
IC代码 64MX16 DDR2
共通IC编号 IS43DR16640B-3DBL-TR
IS43DR16640B-3DBLT

产品详情

脚位/封装 FBGA-84
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.8 V
温度规格 0 C~+85 C
速度 667 MBPS
标准包装数量 2090
标准外箱
Number Of Words 64M
Bit Organization x16
Density 1G
Generation B
Cas Latency 5
Operating Voltage Range 1.8V DDR2
Bus Width x16
Product Family DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
Solder Type SnAgCu
Issi Designator IS

供应链有货

IC 编号 数量 生产年份
IS43DR16640B-3DBL-TR 100,000+ 索取报价
IS43DR16640B-3DBL-TR 25,000 索取报价
IS43DR16640B-3DBL-TR 20,000 索取报价
IS43DR16640B-3DBL-TR 15,000 索取报价
IS43DR16640B-3DBL-TR 10,000 索取报价
IS43DR16640B-3DBL-TR 5,000 索取报价
IS43DR16640B-3DBL-TR 2,500 索取报价
IS43DR16640B-3DBL 1,045 索取报价
IS43DR16640B-3DBL 20,900 索取报价
IS43DR16640B-3DBL 2,090 索取报价

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
EM68C16CWQD-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68C16CWVB-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160BF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2C-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2F-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160C2FL-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18T1G160CF-3S TFBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC 1G160BF-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G1602F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HYB18TC1G160C2F-3S FBGA-84 1.8 V 667 MBPS 0 C~+85 C