图片仅供参考
制造商IC编号 | K4A8G085WD-XCWE |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR4 SDRAM |
IC代码 | 1GX8 DDR4 |
脚位/封装 | FBGA-78 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.2 V |
温度规格 | 0 C~+85 C |
速度 | 2666 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 1G |
Bit Organization | x8 |
Density | 8Gb |
Internal Banks | 16 Banks |
Generation | 5th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4A8G085WD-XCWE | 5,000 | 21+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5AN8G8NAFR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN8G8NAFR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN8G8NCIR-VKIR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN8G8NCJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN8G8NCJR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN8G8NCJR-VKIR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN8G8NDJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
H5AN8G8NJJR-VKC | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
HSAN8G8NCJR-VKCR | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |
IS43QR81024A-075VB | FBGA-78 | 1.2 V | 2666 MBPS | 0 C~+85 C |