图片仅供参考
| 制造商IC编号 | K4B1G1646G-BYK0 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 64MX16 DDR3L |
| 共通IC编号 | K4B1G1646G-BYK0000 |
| K4B1G1646G-BYK00DT |
| 脚位/封装 | FBGA-96 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1600 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 8th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B1G1646G-BYK0 | 148 | 14+ | 索取报价 |
| K4B1G1646G-BYK0 | 11,200 | 1640+ | 索取报价 |
| K4B1G1646G-BYK0 | 408 | 1249+ | 索取报价 |
| K4B1G1646G-BYK0 | 4,000 | 索取报价 | |
| K4B1G1646G-BYK0 | 4,480 | 索取报价 | |
| K4B1G1646G-BYK0 | 0 | 索取报价 | |
| K4B1G1646G-BYK0 | 8,960 | 索取报价 | |
| K4B1G1646G-BYK00DT | 25,009 | 2015 | 索取报价 |
| K4B1G1646G-BYK0 | 10,000 | DC2014+ | 索取报价 |
| K4B1G1646G-BYK0 | 10,000 | 2015 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5TC1G63EFR-PBA | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| H5TC1G63EFR-PBAR | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| IS43TR16640AL-125JBL | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| IS43TR16640AL-125JBL-TR | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| IS43TR16640BL -125JBLC | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| IS43TR16640BL-125JBL | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| IS43TR16640BL-125JBL-TR | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| IS43TR16640BL-125KBL | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| IS43TR16640BL-125KBL-TR | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |
| IS43TR16640BL-125KBLC | FBGA-96 | 1.35V | 1600 MBPS | 0 C~+85 C |