图片仅供参考
| 制造商IC编号 | K4B2G0846C-HCK0 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 256MX8 DDR3 |
| 共通IC编号 | K4B2G0846C-HCK0000 |
| K4B2G0846C-HCK0T |
| 脚位/封装 | FBGA-78 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1600 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x8 |
| Density | 2G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 4th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B2G0846C-HCK0 | 106 | 11+ | 索取报价 |
| K4B2G0846C-HCK0 | 206 | 12+ | 索取报价 |
| K4B2G0846C-HCK0 | 850 | 13+ | 索取报价 |
| K4B2G0846C-HCK0 | 984 | 1322+ | 索取报价 |
| K4B2G0846C-HCK0 | 5,500 | 索取报价 | |
| K4B2G0846C-HCK0 | 436 | 12+02+ | 索取报价 |
| K4B2G0846C-HCK0 | 548 | 1322+ | 索取报价 |
| K4B2G0846C-HCK0 | 1,280 | 13+ | 索取报价 |
| K4B2G0846C-HCK0 | 3,840 | 索取报价 | |
| K4B2G0846C-HCK0 | 6,400 | 13+ | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5TQ2G83CFR-PBA | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83DFR-PBA | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83DFR-PBCR | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83EFR-PBA | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83EFR-PBA NO USE | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83EFR-PBC 1.83 | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83FFR-PBA | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83FFR-PBC 1.82 | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83FFR-PBCR | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |
| H5TQ2G83GFR-PBA | FBGA-78 | 1.5 V | 1600 MBPS | 0 C~+85 C |