图片仅供参考
| 制造商IC编号 | K4B2G1646F-BFMA |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 128MX16 DDR3 |
| 脚位/封装 | FBGA-96 |
| 外包装 | |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | 1120 |
| 标准外箱 | |
| Number Of Words | 128M |
| Bit Organization | x16 |
| Density | 2G |
| Internal Banks | 8 Banks |
| Power | Low, i-TCSR & PASR & DS |
| Generation | 7th Generation |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B2G1646F-BFMA | 28,000 | 20/21+ | 索取报价 |
| K4B2G1646F-BFMA | 10,000 | 索取报价 | |
| K4B2G1646F-BFMA | 20,000 | 21+ | 索取报价 |
| K4B2G1646F-BFMA | 20,000 | 19+ | 索取报价 |
| K4B2G1646F-BFMA | 20,000 | 2101+ | 索取报价 |
| K4B2G1646F-BFMA | 1,122 | 21+ | 索取报价 |
| K4B2G1646F-BFMA | 10,000 | 21+ | 索取报价 |
| K4B2G1646F-BFMA | 10,000 | 19+ | 索取报价 |
| K4B2G1646F-BFMA | 1,120 | 21+ | 索取报价 |
| K4B2G1646F-BFMA | 1,120 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| MT41K128M16JT-107:K | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM6GD16EWBH-10H | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ2G63DFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ2G63FFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ2G63GFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ2G63GFR-RDC 1.65 | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ2G63GFR-RDC D3 128X | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ2G63GFR-RDC(PBF) | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ2G63GFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| IS43TR16128A-107MBL | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| IS43TR16128B-107MB | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |